1~1,000W GaN/GaAs PA/LNA Модуль Кастомизация

HIGHLIGHTS

Based on GaN/GaAs/LDMOS device design, optional reflection, over-temperature, over-current protection circuit unit.
The frequency range covers 4K ~ 110GHz, and the maximum power can reach 1,000W per module.
Customizable a variety of narrow-band, broadband, ultra-wideband and a variety of power levels of continuous wave, pulse power amplifier.
Widely used in radar, communications, RF testing, plasma sputtering, medical and other fields.
The module has high-quality reliability and stability.