1~1,000W GaN/GaAs PA/LNA Модуль Кастомизация

Описание

HIGHLIGHTS

• Based on GaN/GaAs/LDMOS device design, optional reflection, over-temperature, over-current protection circuit unit.
• The frequency range covers 4K ~ 110GHz, and the maximum power can reach 1,000W per module.
• Customizable a variety of narrow-band, broadband, ultra-wideband and a variety of power levels of continuous wave, pulse power amplifier.
• Widely used in radar, communications, RF testing, plasma sputtering, medical and other fields.
• The module has high-quality reliability and stability.

POWER AMPLIFIER SPECIFICATIONS

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