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Description
MAIN FEATURES
- Compact size
- Low cost
- 28 V / 3 A high-voltage drain modulation
APPLICATIONS
- Power modulation for LNAs and PAs in T/R modules
- GaAs / GaN gate modulation driver
- Radar systems, Communication systems, Electronic warfare, Data links
PRODUCT INTRODUCTION
This product is a general-purpose, multi-function T/R power modulation chip. It provides two gate-voltage adjustment channels, one 28 V high-voltage PMOS drain modulation channel, and three 5 V drain modulation channels. The modulation of these channels is directly controlled by T/R control signals through internal switching circuits. The gate-voltage modulation control circuitry supports both GaAs and GaN devices, with two independent gate modulation paths. For GaAs devices, the output voltage is selected via a 3-bit digital control, while for GaN devices, the output voltage is selected via a 4-bit digital control, enabling adjustable gate voltages.
SPECIFICATIONS
T/R Module Series Comparison
